issue 1 - march 2006 1 www.zetex.com ? zetex semiconductors plc 2005 ZXMN4A06K 40v n-channel enhancement mode mosfet summary v (br)dss = -40v; r ds(on) = 0.05 ; i d = 10.9a description this new generation of trench mo sfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance fast switching speed low threshold low gate drive dpak package applications dc - dc converters audio output stages relay and solenoid driving motor control ordering information device marking zxmn 4a06 device reel size (inches) tape width (mm) quantity per reel ZXMN4A06Ktc 13 16 2,500 d s g pinout - top view
ZXMN4A06K issue 1 - march 2006 2 www.zetex.com ? zetex semiconductors plc 2005 absolute maximum ratings notes: (a) for a device surface mounted on 50mm x 50mm x 1.6mm fr 4 pcb with high coverage of single sided 2oz copper, in still air conditions. (b) for a device surface mounted on fr4 pcb measured at t 10 sec. (c) repetitive rating 50mm x 50mm x 1.6mm fr4 pcb, d=0. 02 pulse width=300 s - pulse width limited by maximum junction temperature. (d) for a device surface mounted on 25mm x 25mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. parameter symbol limit unit drain-source voltage v dss 40 v gate-source voltage v gs 20 v continuous drain current: i d v gs =10v; t a =25c (b) 10.9 a v gs =10v; t a =70c (b) 8.7 a v gs =10v; t a =25c (a) 7.2 a pulsed drain current (c) i dm 35.3 a continuous source current (body diode) (b) i s 10.8 a pulsed source current (body diode) (c) i sm 35.3 a power dissipation at t a =25c (a) linear derating factor p d 4.2 33.6 w mw/c power dissipation at t a =25c (b) linear derating factor p d 9.5 76 w mw/c power dissipation at t a =25c (d) linear derating factor p d 2.15 17.2 w mw/c operating and storage temperature range t j :t stg -55 to +150 c thermal resistance parameter symbol value unit junction to ambient (a) r ja 30 c/w junction to ambient (b) r ja 13.2 c/w junction to ambient (d) r ja 58 c/w
ZXMN4A06K issue 1 - march 2006 3 www.zetex.com ? zetex semiconductors plc 2005 characteristics
ZXMN4A06K issue 1 - march 2006 4 www.zetex.com ? zetex semiconductors plc 2005 electrical characteristics (at t a = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 40 v i d =250 a, v gs =0v zero gate voltage drain current i dss 1 av ds =40v, v gs =0v gate-body leakage i gss 100 na v gs =20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 v i d =250 a, v ds = v gs static drain-source on-state resistance (*) notes: (*) measured under pulsed conditions. width 300 s. duty cycle 2%. r ds(on) 0.050 v gs =10v, i d =4.5a 0.075 v gs =4.5v, i d =3.2a forward transconductance (?) g fs 11.5 s v ds =15v,i d =4.5a dynamic (?) input capacitance c iss 827 pf v ds =20 v, v gs =0v, f=1mhz output capacitance c oss 133 pf reverse transfer capacitance c rss 84 pf switching (?) (?) (?) switching characteristics are independ ent of operating junction temperature. (?) for design aid only, not subject to production testing. turn-on delay time t d(on) 3.2 ns v dd =20v, i d =1a r g = 6.0 , v gs =10v (refer to test circuit) rise time t r 3.8 ns turn-off delay time t d(off) 23.3 ns fall time t f 10.9 ns total gate charge q g 17.1 nc v ds =20v,v gs =10v, i d =4.5a (refer to test circuit) gate-source charge q gs 2.41 nc gate-drain charge q gd 3.4 nc source-drain diode diode forward voltage (*) v sd 0.83 0.95 v t j =25c, i s =4.5a, v gs =0v reverse recovery time (?) t rr 16 ns t j =25c, i f =4a, di/dt= 100a/ s reverse recovery charge (?) q rr 9nc
ZXMN4A06K issue 1 - march 2006 5 www.zetex.com ? zetex semiconductors plc 2005 typical charactersitics
ZXMN4A06K issue 1 - march 2006 6 www.zetex.com ? zetex semiconductors plc 2005 typical characteristics current regulator charge gate charge test circuit switching time test circuit basic gate charge waveform switching time waveforms d.u.t 50k 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t d(off) v ds v cc r d r g v ds i d i g
ZXMN4A06K issue 1 - march 2006 7 www.zetex.com ? zetex semiconductors plc 2005 intentionally left blank
ZXMN4A06K issue 1 - march 2006 8 www.zetex.com ? zetex semiconductors plc 2005 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package details - dpak package dimensions note: controlling dimensions are in inches. approx imate dimensions are provided in millimeters dim. inches millimeters dim. inches millimeters min. max. min. max. min. max. min. max. a 0.086 0.094 2.18 2.39 e 0.090 bsc 2.29 bsc a1 - 0.005 - 0.127 h 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 l 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 l1 0.108 ref 2.74 ref b3 0.205 0.215 5.21 5.46 l2 0.020 bsc 0.508 bsc c 0.018 0.024 0.457 0.61 l3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 l4 0.025 0.040 0.635 1.016 d 0.213 0.245 5.41 6.22 l5 0.045 0.060 1.14 1.52 d1 0.205 - 5.21 - 1 0 10 0 10 e 0.250 0.265 6.35 6.73 0 15 0 15 e10.170-4.32------
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